# Quick Answer: Where Can I Find VBE In BJT?

## Where can I find VCE in BJT?

Determine the voltage drop between the collector and emitter junctions (Vce) of the transistor using the formula Vce = Vcc – IcRc, where “Vce” is the collector emitter voltage; “Vcc” is the supply voltage; and “IcRc” is the voltage drop across the base resistor (Rb).

Determine the Vcc in a feedback-biased circuit..

## Is VBE always 0.7 V?

VBE is the voltage that falls between the base and emitter of a bipolar junction transistor. VBE is approximately 0.7V for a silicon transistor. For a germanium transistor (which is more rare), VBE is approximately 0.3V. Again, this formula, can be used for either silicon or germanium transistors.

## How do I find my VBE?

Vbe ranges from 0.6 to 0.7 V for a silicon transistor. Assume Vbe = Vb = 0.7 V. Using Kirchhoff’s Law for the left-hand base loop, Vr = Vbb — Vbe = 3 V — 0.7 V = 2.3 V. Calculate “Ib,” the current through the base resistor.

## What is base emitter voltage?

One of the constraints on transistor action is that this voltage remains at about 0.6 volts (often referred to as the diode drop). … A small change in VBE can produce a large change in collector current and achieve current amplification.

## Why VCE SAT is 0.2 V?

Because the charge carriers injected from the base effectively eliminate the depletion zone between the collector and emitter. The collector current doesn’t have to overcome the P-N junction potential because the base current has neutralized it.

## How is VBC calculated?

It is a stack. one part of that stack is the >base-emitter junction (Vbe). the other part of that stack >is the base-collector junction (Vbc). Add them together and >you have the total stack voltage (Vce), or Vce=Vbe+Vbc. >

## What is the PNP transistor?

The PNP Transistor is the exact opposite to the NPN Transistor device we looked at in the previous tutorial. … Then, PNP transistors use a small base current and a negative base voltage to control a much larger emitter-collector current.

## What is BJT transistor?

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and holes as charge carriers. … BJTs use two junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.

## Why is VBE 0.7 V?

For an unbiased transistor, considering only the BE junction which is a pn junction diode, 0.7V is the potential barrier. In an npn transistor base is positive(p) and emitter is negative(n). … But in a pnp transistor the base is negative(n) and emitter is positive(p) so the vbe=-0.7V.

## What is ΒDC equal to?

βdc is the amplification factor by which the base current gets amplified by. So the total output current, IC will be IC=βdc x IB.

## How much is the base emitter voltage of the transistor?

It appears that base-emitter voltage (Vbe) in transistor is always assumed as 0.6 V in circuit analysis. I’ve seen one figure (see attached image). It seems over the wide range of base current (Ib), Vbe doesn’t change much.

## Why is emitter always forward biased?

When the base emitter junction is forward biased and the collector/base junction is reverse biased, the electrons move from the n-type region towards the p-type region and the holes move towards the n-type region. When they reach each other they combine enabling a current to flow across the junction.